Munich(Germany) In a landmark move set to redefine power system design, Infineon Technologies AG has launched the world’s first industrial-grade gallium nitride (GaN) power transistors with an integrated Schottky diode. This bold innovation marks a major milestone in power electronics, promising unprecedented efficiency, simpler design, and reduced system costs for demanding industrial applications.
Under the CoolGaN™ Transistors G5 family, Infineon’s new offering tackles one of the long-standing pain points in GaN-based power systems: deadtime losses. In traditional GaN circuits, engineers often struggle with high reverse conduction voltage (VRC) and are forced to use external Schottky diodes or meticulously tune controller dead-times — adding complexity, time, and cost to their designs.
Infineon’s solution: integrate the Schottky diode directly into the GaN transistor. This move doesn’t just eliminate the need for external components — it dramatically reduces power losses, boosts compatibility across a wide range of controllers, and simplifies the entire power stage design. The result? Higher overall system efficiency and a leaner bill of materials (BOM).
“This is more than a product launch,” says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line. “It’s a statement of our commitment to pushing the boundaries of wide-bandgap semiconductor technologies. The CoolGaN G5 with integrated Schottky diode is designed with customer needs in mind — empowering designers with greater flexibility and better performance.”
Engineered for high-impact use cases — from server and telecom intermediate bus converters (IBCs) to DC-DC converters, USB-C battery chargers, high-power PSUs, and motor drives — the CoolGaN G5 is tailor-made for the future of industrial power.
The first device in this family is a 100 V, 1.5 mΩ transistor housed in a compact 3 x 5 mm PQFN package, delivering robust performance in a footprint designed for space-sensitive applications.
With this release, Infineon is once again leading the charge in GaN innovation — streamlining power design and setting new standards for efficiency, integration, and simplicity in industrial electronics.
